Irf630 datasheet pdf, irf630 data sheet, irf630, irf630. Irf630 on semiconductor cad model download octopart. Irf630b datasheet, irf630b pdf, irf630b data sheet, datasheet, data sheet, pdf. Irf7304 datasheet66 pages irf generation v technology. Irf630 mosfet complementary, equivalent, replacement. You can use all semiconductor datasheet in alldatasheet, by no fee and no register. Irf630 datasheet nch, 200v, power mosfet st, irf630fp datasheet, irf630 pdf, irf630 pinout, irf630 manual, irf630 schematic, irf630 equivalent. Irf630b datasheet 200v nchannel bfet substitute of. Please see the information tables in this datasheet for details.
The irf630 from stmicroelectronics is a through hole, 200v n channel mesh overlay ii power mosfet in to220 package. There is no collector, only gate, drain and source. Pricing and availability on millions of electronic components from digikey electronics. Service manuals, schematics, eproms for electrical technicians. If you cannot download this file, try it with chrome or firefox browser. Irf630b datasheet, irf630b pdf, irf630b data sheet, irf630b manual, irf630b pdf, irf630b, datenblatt, electronics irf630b, alldatasheet, free, datasheet, datasheets.
Irf630, irf630 datasheet, irf630 mosfet nchannel transistor datasheet, buy irf630 transistor. Irf630 stmicroelectronics, power mosfet, n channel, 200. They are advanced power mosfets designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode. Use stmicroelectronics irf630 power mosfet to switch quickly between different electronic signals with ease. Irf630 stmicroelectronics discrete semiconductor products. G d s gate drain flange source drain drain gate flange source data sheet january 2002. Features extremely high dvdt capability, very low intrinsic capacitances and gate charge minimized. August 2006 rev 9 114 14 irf630 irf630fp nchannel 200v 0. Test circuit for inductive load switching and datasheeet recovery times figure safe operating area for to figure 3. Addthesuffix9ato obtain the to263ab variant in the tape and reel, i. Irf630 datasheet, irf630 pdf, irf630 data sheet, datasheet, data sheet, pdf.
This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching. Irf630irfs630 are available in to220to220f packages. These nchannel enhancement mode power field effect transistors are produced using fairchilds proprietary, planar, dmos technology. Intersil corporation reserves the right to make changes.
They are advanced power mosfets designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of. For example, parts with lead pb te rminations are not rohscompliant. The user must modify these values appropriately when testing a different device. These are nchannel enhancement mode silicon gate power field effect transistors. Irf630 from stmicroelectronics, inc find the pdf datasheet, specifications and distributor information. The control settings given in the examples are those suitable for the irf630. In order to ensure parts arent damaged by bulk packaging, this product comes in tube packaging to add a little more protection by. Thruhole to204aa description for footnotes refer to the page 2.
Description this power mosfet is designed using the companys consolidated strip layoutbased mesh overlaytm process. Irf630irfs630 are nchannel enhancement mode power mosfets with advanced technology. Irf630 datasheet, irf630 datasheets, irf630 pdf, irf630 circuit. Compare pricing for on semiconductor irf630 across 4 distributors and discover alternative parts, cad models, technical specifications, datasheets, and more on octopart. Mounting pad area the maximum rated junction temperature, tjm, and the thermal resistance of the heat dissipating path determines the maximum allowable device power dissipation, p dm, in an application. Irf630 general description it uses advanced trench technology and design to provide excellent r dson with low gate charge. Select the part name and then you can download the datasheet in pdf.
We are a professional manufacturer and distributor of. Intersil semiconductor products are sold by description only. Extremelyhigh dvdt capability verylow intrinsic capacitances gatecharge minimized description this power mosfet is designed using he companys consolidatedstrip layoutbased mesh overlay process. The irf630 is a power mosfet transistor in a to220ab package. This technology matches and improves the performances compared with standard parts from various sources. Irf630 o220 c120 irf630 060105d pin detail irf630 irf630 datasheet for irf630 irf630 transistor. Description third generation power mosfets from vishay provide the. Over 10 years experience in electronic components dealing 2. Irf630 nchannel 200v 9a tc 75w tc through hole to220ab from stmicroelectronics. Irf630, sihf630 vishay siliconix features dynamic dvdt rating repetitive avalanche rated.
Irf630 datasheet, irf630 pdf, irf630 data sheet, irf630 manual, irf630 pdf, irf630, datenblatt, electronics irf630, alldatasheet, free, datasheet, datasheets, data. Extremely high dvdt capability 100% avalanche tested new high voltage benchmark gate charge minimized description the powermesh ii is the evolution of the first generation of mesh overlay. This datasheet provides information about parts that are rohscompliant and or parts that are nonrohscompliant. Extremely high dvdt capability very low intrinsic capacitances gate charge minimized description this power mosfet is designed using the companys consolidated strip layoutbased mesh overlay process.
G d s gate drain flange source drain drain flange gate source data sheet june 1999. Maximum effective transient thermal impedance, junctiontoambient0. This power mosfet series realized with stmicroelectronics unique stripfet process has specifically been designed to minimize input capacitance and gate charge. Extremely high dvdt capability very low intrinsic capacitances 3 3 gate charge. Jameco will remove tariff surcharges for online orders on instock items learn more. Repetitive avalanche and dvdt rated 200v, nchannel transistors. These power mosfets are designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. This power mosfet is designed using the companys consolidated strip layout based mesh overlay process which matches and improves the performances.
This advanced technology has been especially tailored to minimize. Nov 01, 2016 irf630 datasheet nch, 200v, power mosfet st, irf630fp datasheet, irf630 pdf, irf630 pinout, irf630 manual, irf630 schematic, irf630 equivalent. Major brands irf630 transistor, mosfet, n channel, 200 volt, 10. Pricing and availability on millions of electronic components from digikey. Irf630 datasheet26 pages irf power mosfetvdss200v, rds. Irf630, irf630 nchannel mosfet transistor, buy irf630 transistor. This datasheet is subject to change without notice. Major brands irf630 transistor, mosfet, n channel, 200 volt. Select the part name and then you can download the datasheet in.
The hexfet power mosfet used in all the examples is the irf630. Irf630 service manual download, schematics, eeprom, repair. Irf630 product summary order code irf630 marking irf630 package to220 packing tube nchannel 200 v, 0. Irf630 is a power mosfet, not a bipolar junction transistor. Find the pdf datasheet, specifications and distributor information. You can replace irf630 with irf640, irf644, irfb17n50l. This device is suitable for high current load applications.
Power mosfet irf630, sihf630 vishay siliconix features dynamic dvdt rating repetitive avalanche rated fas st wcthniig ease of paralleling simple drive requirements compliant to rohs directive 200295ec description. The irf630 was selected since it is a typical midrange device with a voltage rating of 200 volts and a. Philips, alldatasheet, datasheet, datasheet search site for electronic. Extremelyhigh dvdt capability verylow intrinsic capacitances gatecharge minimized description this power mosfet is designed using he companys consolidatedstrip layoutbased mesh. Irf630birfs630b 200v nchannel mosfet general description these nchannel enhancement mode power field effect transistors are produced using fairchilds proprietary, planar, dmos technology. Maximum safe operating area 1 10 100 vds, draintosource voltage v 0 2000 3000 4000 5000 6000 c, capacitancepf coss crss ciss vgs 0v, f 1 mhz. Nchannel trenchmos transistor, irf630 datasheet, irf630 circuit, irf630 data sheet. Add the suffix 9a to obtain the to263ab variant in the tape and reel, i. Extremely high dvdt capability very low intrinsic capacitances 3 3 gate charge minimized 2 2 1 1 to220 to220fp description. Milprf19500542 features repetitive avalanche ratings dynamic dvdt rating hermetically sealed simple drive requirements esd rating. They are advanced power mosfets designed, tested, and guaranteed to withstand a speci.
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